发现好书期刊,享受阅读乐趣

海量图书期刊资源,随时随地畅享阅读乐趣

Effect of the Tantalum Barrier Layer on the Electromigration and Stress Migration Resistance of Physical-Vapor-Deposited Copper Interconnect

Effect of the Tantalum Barrier Layer on the Electromigration and Stress Migration Resistance of Physical-Vapor-Deposited Copper Interconnect

Chin, Yu-Lung; Chiou, Bi-Shiou; Wu, Wen-Fa
  • 期刊名称Japanese Journal of Applied Physics
  • 作者Chin, Yu-Lung; Chiou, Bi-Shiou; Wu, Wen-Fa
  • 卷第41卷
  • 印刷ISSN0021-4922
  • 电子ISSN1347-4065
  • 文件大小660.28KB
  • 发表时间2002-5-15
  • DOI10.1143/JJAP.41.3057
  • 页码3057-3064
← 返回【学霸图书馆】主页