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Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System

Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System

Wagner, Günter; Leitenberger, W.; Irmscher, K.; Schmid, Frank; Laube, Michael; Pensl, Gerhard
  • 期刊名称Materials Science Forum
  • 作者Wagner, Günter; Leitenberger, W.; Irmscher, K.; Schmid, Frank; Laube, Michael; Pensl, Gerhard
  • 电子ISSN1662-9752
  • 文件大小303.20KB
  • 发表时间2002
  • DOI10.4028/www.scientific.net/MSF.389-393.207
  • 页码207-210
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