Suppression of parasitic JFET effect in trench IGBTs by using a self-aligned p base process
- 作者X Yuan; T Trajkovic; F Udrea; J Thomson; P.R Waind; P Taylor; G.A.J Amaratunga
- 卷第46卷
- 期第11期
- 印刷ISSN0038-1101
- 文件大小442.77KB
- 发表时间2002
- DOI10.1016/s0038-1101(02)00132-6
- 页码1907-1912
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