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Reduced pressure chemical vapor deposition of Si[sub 1−x−y]Ge[sub x]C[sub y]/Si and Si[sub 1−y]C[sub y]/Si heterostructures

Reduced pressure chemical vapor deposition of Si[sub 1−x−y]Ge[sub x]C[sub y]/Si and Si[sub 1−y]C[sub y]/Si heterostructures

V. Loup; J. M. Hartmann; G. Rolland; P. Holliger; F. Laugier; C. Vannuffel; M. N. Séméria
  • 作者V. Loup; J. M. Hartmann; G. Rolland; P. Holliger; F. Laugier; C. Vannuffel; M. N. Séméria
  • 文件大小1481.22KB
  • 发表时间2002
  • DOI10.1116/1.1481755
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