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Semi-insulating silicon carbide layers obtained by diffusion of vanadium into porous 4H-SiC

Semi-insulating silicon carbide layers obtained by diffusion of vanadium into porous 4H-SiC

M. G. Mynbaeva; A. A. Lavrent’ev; N. I. Kuznetsov; A. N. Kuznetsov; K. D. Mynbaev; A. A. Lebedev
  • 作者M. G. Mynbaeva; A. A. Lavrent’ev; N. I. Kuznetsov; A. N. Kuznetsov; K. D. Mynbaev; A. A. Lebedev
  • 卷第37卷
  • 期第5期
  • 印刷ISSN1063-7826
  • 电子ISSN1090-6479
  • 文件大小48.56KB
  • 发表时间2003-05
  • DOI10.1134/1.1575367
  • 页码594-597
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