Indium segregation to dislocation loops induced by ion implantation damage in silicon
- 期刊名称Journal of Applied Physics
- 作者Noda, Taiji
- 卷第93卷
- 期第3期
- 印刷ISSN0021-8979
- 文件大小690.41KB
- 发表时间2003
- DOI10.1063/1.1534629
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