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[IEEE IEEE International Conference on Simulation of Semiconductor Processes and Devices - Boston, MA, USA (2003.09.3-2003.09.5)] International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. - Non-destructive inverse modeling of copper interconnect structure for 90nm technology node

[IEEE IEEE International Conference on Simulation of Semiconductor Processes and Devices - Boston, MA, USA (2003.09.3-2003.09.5)] International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. - Non-destructive inverse modeling of copper interconnect structure for 90nm technology node

Kunikiyo, T.; Watanabe, T.; Kanamoto, T.; Asazato, H.; Shirota, M.; Eikyu, K.; Ajioka, Y.; Makino, H.; Ishikawa, K.; Iwade, S.; Inoue, Y.; Yamashita, K.; Kobayashi, M.; Gohda, A.; Oda, Y.; Yamaguchi, R.; Umimoto, H.; Ohtani, K.
  • 作者Kunikiyo, T.; Watanabe, T.; Kanamoto, T.; Asazato, H.; Shirota, M.; Eikyu, K.; Ajioka, Y.; Makino, H.; Ishikawa, K.; Iwade, S.; Inoue, Y.; Yamashita, K.; Kobayashi, M.; Gohda, A.; Oda, Y.; Yamaguchi, R.; Umimoto, H.; Ohtani, K.
  • 文件大小374.76KB
  • 发表时间2003
  • DOI10.1109/SISPAD.2003.1233630
  • 页码31-34
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