[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - Substrate-strained silicon technology: process integration [CMOS technology]

Wang, H.C.-H.; Wang, Y.-P.; Chen, S.-J.; Ge, C.-H.; Ting, S.M.; Kung, J.-Y.; Hwang, R.-L.; Chiu, H.-K.; Sheu, L.C.; Tsai, P.-Y.; Yao, L.-G.; Chen, S.-C.; Tao, H.-J.; Yeo, Y.-C.; Lee, W.-C.; Hu, C.

作者Wang, H.C.-H.; Wang, Y.-P.; Chen, S.-J.; Ge, C.-H.; Ting, S.M.; Kung, J.-Y.; Hwang, R.-L.; Chiu, H.-K.; Sheu, L.C.; Tsai, P.-Y.; Yao, L.-G.; Chen, S.-C.; Tao, H.-J.; Yeo, Y.-C.; Lee, W.-C.; Hu, C.
文件大小282.33KB
发表时间2003
DOI10.1109/iedm.2003.1269166

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[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - Substrate-strained silicon technology: process integration [CMOS technology]