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[IEEE Oper. Center 2003 International Semiconductor Conference. CAS 2003 - Sinaia, Romania (28 Sept.-2 Oct. 2003)] 2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat. No.03TH8676) - Electrical parameter variation of PT-IGBT by backside proton irradiation

[IEEE Oper. Center 2003 International Semiconductor Conference. CAS 2003 - Sinaia, Romania (28 Sept.-2 Oct. 2003)] 2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat. No.03TH8676) - Electrical parameter variation of PT-IGBT by backside proton irradiation

Jorda, X.; Vobecky, J.; Godignon, P.; Perpina, X.; Vellvehi, M.; Hazdra, P.; Millan, J.
  • 作者Jorda, X.; Vobecky, J.; Godignon, P.; Perpina, X.; Vellvehi, M.; Hazdra, P.; Millan, J.
  • 文件大小259.12KB
  • 发表时间2003
  • DOI10.1109/smicnd.2003.1252437
  • 页码289-292
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