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Influence of working gas pressure on structure and properties of WO[sub 3] films reactively deposited by rf magnetron sputtering

Influence of working gas pressure on structure and properties of WO[sub 3] films reactively deposited by rf magnetron sputtering

T. Takahashi; J. Tanabe; N. Yamada; H. Nakabayashi
  • 作者T. Takahashi; J. Tanabe; N. Yamada; H. Nakabayashi
  • 文件大小407.91KB
  • 发表时间2003
  • DOI10.1116/1.1575216
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