发现好书期刊，享受阅读乐趣

海量图书期刊资源，随时随地畅享阅读乐趣

Influence of the polarization on interfacial properties in Al/SiO[sub 2]/GaN/Al[sub 0.4]Ga[sub 0.6]N/GaN heterojunction metal–insulator–semiconductor structures

Influence of the polarization on interfacial properties in Al/SiO[sub 2]/GaN/Al[sub 0.4]Ga[sub 0.6]N/GaN heterojunction metal–insulator–semiconductor structures

Chen, P.; Chua, S. J.; Wang, W. D.; Chi, D. Z.; Miao, Z. L.; Zheng, Y. D.

期刊名称Journal of Applied Physics
作者Chen, P.; Chua, S. J.; Wang, W. D.; Chi, D. Z.; Miao, Z. L.; Zheng, Y. D.
卷第94卷
期第7期
印刷ISSN0021-8979
文件大小282.44KB
发表时间2003
DOI10.1063/1.1599046

← 返回【学霸图书馆】主页