Mobility enhancement in AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors

• 期刊名称Semiconductor Science and Technology
• 作者Levinshtein, M E; Ivanov, P A; Khan, M Asif; Simin, G; Zhang, J; Hu, X; Yang, J
• 卷第18卷
• 期第7期
• 印刷ISSN0268-1242
• 电子ISSN1361-6641
• 文件大小133.40KB
• 发表时间2003-07-01
• DOI10.1088/0268-1242/18/7/311
• 页码666-669