GaN based laser diodes – epitaxial growth and device fabrication
- 作者T. Böttcher; S. Figge; S. Einfeldt; R. Chierchia; R. Kröger; Ch. Petter; Ch. Zellweger; H.-J. Bühlmann; M. Dießelberg; D. Rudloff; J. Christen; H. Heinke; P. L. Ryder; M. Ilegems; D. Hommel
- 期第6期
- 印刷ISSN1610-1634
- 电子ISSN1610-1642
- 文件大小339.02KB
- 发表时间2003
- DOI10.1002/pssc.200303128
- 页码1846-1859
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