[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Mobility improvement for 45nm node by combination of optimized stress control and channel orientation design
Komoda, T.; Oishi, A.; Sanuki, T.; Kasai, K.; Yoshimura, H.; Ohno, K.; lwai, M.; Saito, M.; Matsuoka, F.; Nagashima, N.; Noguchi, T.
- 作者Komoda, T.; Oishi, A.; Sanuki, T.; Kasai, K.; Yoshimura, H.; Ohno, K.; lwai, M.; Saito, M.; Matsuoka, F.; Nagashima, N.; Noguchi, T.
- 文件大小254.97KB
- 发表时间2004
- DOI10.1109/iedm.2004.1419113
- 页码217-220