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[Advanced Texts in Physics] Silicon Carbide || High Nitrogen Doping During Bulk Growth of SiC

[Advanced Texts in Physics] Silicon Carbide || High Nitrogen Doping During Bulk Growth of SiC

Choyke, W. J.; Matsunami, H.; Pensl, G.

作者Choyke, W. J.; Matsunami, H.; Pensl, G.
文件大小426.22KB
发表时间2004
DOI10.1007/978-3-642-18870-1_7
页码163-178

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