[IEEE 2004 IEEE International Reliability Physics Symposium. - Phoenix, AZ, USA (25-29 April 2004)] 2004 IEEE International Reliability Physics Symposium. Proceedings - The influence of heavily doped buried layer implants on electrostatic discharge (ESD), latchup, and a silicon germanium heterojunction bipolar transistor in a BiCMOS SiGe technology
- 作者Voldman, S.; Lanzerotti, L.; Morris, W.; Rubin, L.
- 文件大小642.85KB
- 发表时间2004
- DOI10.1109/RELPHY.2004.1315315
- 页码143-151
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