![[IEEE 2009 17th International Conference on Advanced Thermal Processing of Semiconductors (RTP) - Albany, NY, USA (2009.09.29-2009.10.2)] 2009 17th International Conference on Advanced Thermal Processing of Semiconductors - 22nm node n+ SiC stressor using deep PAI+C<inf>7</inf>H<inf>7</inf>+P<inf>4</inf> with laser annealing]()
[IEEE 2009 17th International Conference on Advanced Thermal Processing of Semiconductors (RTP) - Albany, NY, USA (2009.09.29-2009.10.2)] 2009 17th International Conference on Advanced Thermal Processing of Semiconductors - 22nm node n+ SiC stressor using deep PAI+C<inf>7</inf>H<inf>7</inf>+P<inf>4</inf> with laser annealingBorland, John; Tanjyo, Masayasu; Hamamoto, Nariaki; Nagayama, Tsutomu; Muthukrishnan, Shankar; Zelenko, Jeremy; Mirshad, Iad; Johnson, Walt; Buyuklimanli, Temel; Itokawa, Hiroshi; Mizushima, Ichiro; Suguro, Kyoichi · 2009