The use of neutron diffraction in the quantitative characterization of dopant-dependent dynamical properties of semiconductors
- 作者D Martı́n y Marero; V Corregidor; M Fiederle; E Diéguez
- 卷第350卷
- 印刷ISSN0921-4526
- 文件大小214.06KB
- 发表时间2004
- DOI10.1016/j.physb.2004.03.149