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[IEEE Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. - Honolulu, HI, USA (2004.06.17-2004.06.17)] Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. - Charge-injection length in silicon nanocrystal memory cells

[IEEE Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. - Honolulu, HI, USA (2004.06.17-2004.06.17)] Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. - Charge-injection length in silicon nanocrystal memory cells

Osabe, T.; Ishii, T.; Mine, T.; Sano, T.; Arigane, T.; Fukumura, T.; Kurata, H.; Saeki, S.; Ikeda, Y.; Yano, K.
  • 作者Osabe, T.; Ishii, T.; Mine, T.; Sano, T.; Arigane, T.; Fukumura, T.; Kurata, H.; Saeki, S.; Ikeda, Y.; Yano, K.
  • 文件大小181.74KB
  • 发表时间2004
  • DOI10.1109/vlsit.2004.1345503
  • 页码242-243
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