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Kinetics of TiN Chemical Vapor Deposition Process using TiCl
<sub/>4</sub>
and NH
<sub/>3</sub>
for ULSI Diffusion Barrier Applications: Relationship between Step Coverage and NH
<sub/>3</sub>
Partial Pressure

Kinetics of TiN Chemical Vapor Deposition Process using TiCl ₄ and NH ₃ for ULSI Diffusion Barrier Applications: Relationship between Step Coverage and NH ₃ Partial Pressure

Jun, Keeyoung; Egashira, Yasuyuki; Shimogaki, Yukihiro

期刊名称Japanese Journal of Applied Physics
作者Jun, Keeyoung; Egashira, Yasuyuki; Shimogaki, Yukihiro
卷第43卷
期第10期
印刷ISSN0021-4922
电子ISSN1347-4065
文件大小316.02KB
发表时间2004-10-8
DOI10.1143/JJAP.43.7287
页码7287-7291

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