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A Variable Channel-Size MOSFET with Lightly Doped Drain Structure

A Variable Channel-Size MOSFET with Lightly Doped Drain Structure

N. Nakanose; Y. Arima; T. Asano; Y. Kosasayama; M. Ueno; M. Kimata

作者N. Nakanose; Y. Arima; T. Asano; Y. Kosasayama; M. Ueno; M. Kimata
文件大小842.76KB
发表时间2004
DOI10.1143/JJAP.43.1763

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