Resistivity Measurements of Directly Bonded Si Wafers
- 期刊名称Japanese Journal of Applied Physics
- 作者Kanno, Ikuo; Nakayama, Atsushi; Nomiya, Seiichiro; Onabe, Hideaki
- 卷第43卷
- 期第10期
- 印刷ISSN0021-4922
- 电子ISSN1347-4065
- 文件大小317.48KB
- 发表时间2004-10-8
- DOI10.1143/JJAP.43.6996
- 页码6996-6997
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