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[IEEE Proceedings of the 2004 IEEE International Conference on Solid Dielectrics, 2004. ICSD 2004. - Toulouse, France (July 5-9, 2004)] Proceedings of the 2004 IEEE International Conference on Solid Dielectrics, 2004. ICSD 2004. - The effect of gate material on dielectric characteristics and conduction mechanism of Ta/sub 2/O/sub 5/ MOS structures

[IEEE Proceedings of the 2004 IEEE International Conference on Solid Dielectrics, 2004. ICSD 2004. - Toulouse, France (July 5-9, 2004)] Proceedings of the 2004 IEEE International Conference on Solid Dielectrics, 2004. ICSD 2004. - The effect of gate material on dielectric characteristics and conduction mechanism of Ta/sub 2/O/sub 5/ MOS structures

Pecovska-Gjorgievich, M.; Novkovski, N.; Atanassova, E.; Spasov, D.
  • 作者Pecovska-Gjorgievich, M.; Novkovski, N.; Atanassova, E.; Spasov, D.
  • 卷第2卷
  • 文件大小199.98KB
  • 发表时间2004
  • DOI10.1109/icsd.2004.1350570
  • 页码872-875
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