Numerical analysis for transient point defect behavior in Czochralski silicon crystal growth
- 作者Jong Hoe Wang; Jong-In Im; Kyoung-Hee Lee
- 卷第21卷
- 期第6期
- 印刷ISSN0256-1115
- 电子ISSN1975-7220
- 文件大小1500.53KB
- 发表时间2004-12
- DOI10.1007/bf02719499
- 页码1231-1234
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