Formation process for and strain effect in InAs quantum dots grown on GaAs substrates by using molecular beam epitaxy

• 作者M.D. Kim; D.H. Lee; T.W. Kim; S.G. Kim
• 卷第130卷
• 期第7期
• 印刷ISSN0038-1098
• 文件大小521.76KB
• 发表时间2004
• DOI10.1016/j.ssc.2004.02.043
• 页码473-476