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Transient picosecond Raman studies of electron and hole velocity overshoots in a GaAs-based p–i–n semiconductor nanostructure

Transient picosecond Raman studies of electron and hole velocity overshoots in a GaAs-based p–i–n semiconductor nanostructure

Liang, W; Tsen, K T; Poweleit, C; Barker, J M; Ferry, D K; Morkoc, H
  • 期刊名称Journal of Physics: Condensed Matter
  • 作者Liang, W; Tsen, K T; Poweleit, C; Barker, J M; Ferry, D K; Morkoc, H
  • 卷第17卷
  • 期第10期
  • 印刷ISSN0953-8984
  • 电子ISSN1361-648X
  • 文件大小320.06KB
  • 发表时间2005-03-16
  • DOI10.1088/0953-8984/17/10/021
  • 页码1679-1686
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