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Investigation of Si/SiGe/Si on Si-on-insulator by high resolution electron microscopy and synchrotron radiation double-crystal topography

Investigation of Si/SiGe/Si on Si-on-insulator by high resolution electron microscopy and synchrotron radiation double-crystal topography

T.D. Ma; H.L. Tu; B.L. Shao; A.S. Liu; G.Y. Hu

作者T.D. Ma; H.L. Tu; B.L. Shao; A.S. Liu; G.Y. Hu
印刷ISSN0921-5107
文件大小396.72KB
发表时间2005
DOI10.1016/j.mseb.2005.08.075
页码148-152

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