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[IEEE IEEE 2005 International Interconnect Technology Conference - Burlingame, CA, USA (6-8 June 2005)] Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. - Low resistive and highly reliable Cu dual-damascene interconnect technology using self-formed MnSi/sub x/O/sub y/ barrier layer

[IEEE IEEE 2005 International Interconnect Technology Conference - Burlingame, CA, USA (6-8 June 2005)] Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. - Low resistive and highly reliable Cu dual-damascene interconnect technology using self-formed MnSi/sub x/O/sub y/ barrier layer

Usui, T.; Nasu, H.; Koike, J.; Wada, M.; Takahashi, S.; Shimizu, N.; Nishikawa, T.; Yoshimaru, A.; Shibata, H.
  • 作者Usui, T.; Nasu, H.; Koike, J.; Wada, M.; Takahashi, S.; Shimizu, N.; Nishikawa, T.; Yoshimaru, A.; Shibata, H.
  • 文件大小536.88KB
  • 发表时间2005
  • DOI10.1109/iitc.2005.1499975
  • 页码188-190
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