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Etching mechanisms of Si and SiO[sub 2] in inductively coupled fluorocarbon plasmas: Correlation between plasma species and surface etching

Etching mechanisms of Si and SiO[sub 2] in inductively coupled fluorocarbon plasmas: Correlation between plasma species and surface etching

Gaboriau, F.; Fernandez-Peignon, M-C.; Cartry, G.; Cardinaud, Ch.

期刊名称Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
作者Gaboriau, F.; Fernandez-Peignon, M-C.; Cartry, G.; Cardinaud, Ch.
卷第23卷
期第2期
印刷ISSN0734-2101
文件大小406.81KB
发表时间2005
DOI10.1116/1.1851541

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