Surface roughness in sulfur ion-implanted InP with molecular beam epitaxy regrown double-heterojunction bipolar transistor layers
- 期刊名称Applied Physics Letters
- 作者Hu, Ting-Chen; Chang, M. F.; Weimann, Nils; Chen, Jianxin; Chen, Young-Kai
- 卷第86卷
- 期第14期
- 印刷ISSN0003-6951
- 文件大小399.40KB
- 发表时间2005
- DOI10.1063/1.1891270
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