The HfSi[sub x]O[sub y] Interfacial Layer Effect on Improving Electrical Characteristics of Ultrathin High-κ TiO[sub 2] Gate Dielectric
- 期刊名称Electrochemical and Solid-State Letters
- 作者Sim, Hyunjun; Samantaray, Chandan B.; Hwang, Hyunsang
- 卷第8卷
- 期第1期
- 印刷ISSN1099-0062
- 文件大小173.53KB
- 发表时间2005
- DOI10.1149/1.1828271
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