Effect of annealing on interface state density of Ni-silicided/Si1−xGex Schottky diode

• 作者A.R. Saha; S. Chattopadhyay; G.K. Dalapati; C. Bose; C.K. Maiti
• 卷第8卷
• 印刷ISSN1369-8001
• 文件大小277.42KB
• 发表时间2005
• DOI10.1016/j.mssp.2004.09.042
• 页码249-253