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Double-Ion-Implanted GaN MESFETs with Extremely Low Source/Drain Resistance

Double-Ion-Implanted GaN MESFETs with Extremely Low Source/Drain Resistance

Nomoto, Kazuki; Ito, Nobuyuki; Tajima, Taku; Kasai, Takeshi; Mishima, Tomoyoshi; Inada, Taroh; Satoh, Masataka; Nakamura, Tohru
  • 期刊名称MRS Proceedings
  • 作者Nomoto, Kazuki; Ito, Nobuyuki; Tajima, Taku; Kasai, Takeshi; Mishima, Tomoyoshi; Inada, Taroh; Satoh, Masataka; Nakamura, Tohru
  • 卷第892卷
  • 电子ISSN1946-4274
  • 文件大小124.57KB
  • 发表时间2005-1
  • DOI10.1557/PROC-0892-FF13-06
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