Double-Ion-Implanted GaN MESFETs with Extremely Low Source/Drain Resistance
Nomoto, Kazuki; Ito, Nobuyuki; Tajima, Taku; Kasai, Takeshi; Mishima, Tomoyoshi; Inada, Taroh; Satoh, Masataka; Nakamura, Tohru
- 期刊名称MRS Proceedings
- 作者Nomoto, Kazuki; Ito, Nobuyuki; Tajima, Taku; Kasai, Takeshi; Mishima, Tomoyoshi; Inada, Taroh; Satoh, Masataka; Nakamura, Tohru
- 卷第892卷
- 电子ISSN1946-4274
- 文件大小124.57KB
- 发表时间2005-1
- DOI10.1557/PROC-0892-FF13-06