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[AIP PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27 - Flagstaff, Arizona (USA) (26-30 July 2004)] AIP Conference Proceedings - Defect kinetics of O-V-N complexes in Si ingot growth based on first-principles calculations and thermodynamics

[AIP PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27 - Flagstaff, Arizona (USA) (26-30 July 2004)] AIP Conference Proceedings - Defect kinetics of O-V-N complexes in Si ingot growth based on first-principles calculations and thermodynamics

Kageshima, Hiroyuki

作者Kageshima, Hiroyuki
卷第772卷
文件大小251.45KB
发表时间2005
DOI10.1063/1.1994002
页码77-78

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