![[IEEE 2015 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2015.12.7-2015.12.9)] 2015 IEEE International Electron Devices Meeting (IEDM) - Gate-first high-k/metal gate DRAM technology for low power and high performance products]()
[IEEE 2015 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2015.12.7-2015.12.9)] 2015 IEEE International Electron Devices Meeting (IEDM) - Gate-first high-k/metal gate DRAM technology for low power and high performance productsSung, Minchul; Jang, Se-Aug; Lee, Hyunjin; Ji, Yun-Hyuck; Kang, Jae-Il; Jung, Tae-O; Ahn, Tae-Hang; Son, Yun-Ik; Kim, Hyung-Chul; Lee, Sun-Woo; Lee, Seung-Mi; Lee, Jung-Hak; Baek, Seung-Beom; Doh, Eun-Hyup; Cho, Heung-Jae; Jang, Tae-Young; Jang, Il-Sik; Han, Jae-Hwan; Ko, Kyung-Bo; Lee, Yu-Jun; Shin, Su-Bum; Yu, Jae-Seon; Cho, Sung-Hyuk; Han, Ji-Hye; Kang, Dong-Kyun; Kim, Jinsung; Lee, Jae-Sang; Ban, Keun-Do; Yeom, Seung-Jin; Nam, Hyun-Wook; Lee, Dong-Kyu; Jeong, Mun-Mo; Kwak, Byungil; Park, Jeongsoo; Choi, Kisik; Park, Sung-Kye; Kwak, Noh-Jung; Hong, Sung-Joo · 2015