Fast epitaxial growth of high-purity 4H-SiC((000ar 1)) in a vertical hot-wall chemical vapor deposition) in a vertical hot-wall chemical vapor deposition

• 作者Katsunori Danno; Tsunenobu Kimoto; Katsunori Asano; Yoshitaka Sugawara; Hiroyuki Matsunami
• 卷第34卷
• 期第4期
• 印刷ISSN0361-5235
• 电子ISSN1543-186X
• 文件大小292.73KB
• 发表时间2005
• DOI10.1007/s11664-005-0104-7
• 页码324-329