Modeling and simulation of a nanoscale three-region tri-material gate stack (TRIMGAS) MOSFET for improved carrier transport efficiency and reduced hot-electron effects

• 作者Goel, K.; Saxena, M.; Gupta, M.; Gupta, R.S.
• 卷第53卷
• 期第7期
• 印刷ISSN0018-9383
• 电子ISSN1557-9646
• 文件大小702.78KB
• 发表时间2006
• DOI10.1109/ted.2006.876272
• 页码1623-1633