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Effect of gate-drain/source overlap on the noise in 90 nm N-channel metal oxide semiconductor field effect transistors

Effect of gate-drain/source overlap on the noise in 90 nm N-channel metal oxide semiconductor field effect transistors

Srinivasan, R.; Bhat, Navakanta

期刊名称Journal of Applied Physics
作者Srinivasan, R.; Bhat, Navakanta
卷第99卷
期第8期
印刷ISSN0021-8979
文件大小434.08KB
发表时间2006
DOI10.1063/1.2189217

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