Charge trapping and dielectric relaxation in connection with breakdown of high-k gate dielectric stacks

• 期刊名称Applied Physics Letters
• 作者Luo, Wen; Yuan, Tao; Kuo, Yue; Lu, Jiang; Yan, Jiong; Kuo, Way
• 卷第88卷
• 期第20期
• 印刷ISSN0003-6951
• 文件大小568.39KB
• 发表时间2006
• DOI10.1063/1.2203942