Influence of annealing on the bias voltage dependence of tunneling magnetoresistance in MgO double-barrier magnetic tunnel junctions with CoFeB electrodes

• 期刊名称Applied Physics Letters
• 作者Feng, Gen; van Dijken, Sebastiaan; Coey, J. M. D.
• 卷第89卷
• 期第16期
• 印刷ISSN0003-6951
• 文件大小561.88KB
• 发表时间2006
• DOI10.1063/1.2362977