Millisecond Anneal and Short-Channel Effect Control in Si CMOS Transistor Performance
- 期刊名称IEEE Electron Device Letters
- 作者Nieh, C. F.; Ku, K. C.; Chen, C. H.; Chang, H.; Wang, L. T.; Huang, L. P.; Sheu, Y. M.; Wang, C. C.; Lee, T. L.; Chen, S. C.; Liang, M. S.; Gong, J.
- 卷第27卷
- 期第12期
- 印刷ISSN0741-3106
- 文件大小106.28KB
- 发表时间2006-12
- DOI10.1109/led.2006.886317
- 页码969-971
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