Transient numerical study of temperature gradients during sublimation growth of SiC: Dependence on apparatus design
- 作者Jürgen Geiser; Olaf Klein; Peter Philip
- 卷第297卷
- 期第1期
- 印刷ISSN0022-0248
- 文件大小808.64KB
- 发表时间2006
- DOI10.1016/j.jcrysgro.2006.08.046
- 页码20-32
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