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Low Threshold-14 W/mm ZrO
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/AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors

Low Threshold-14 W/mm ZrO ₂ /AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors

Rai, Shiva; Adivarahan, Vinod; Tipirneni, Naveen; Koudymov, Alexei; Yang, Jinwei; Simin, Grigory; Asif Khan, Muhammad

期刊名称Japanese Journal of Applied Physics
作者Rai, Shiva; Adivarahan, Vinod; Tipirneni, Naveen; Koudymov, Alexei; Yang, Jinwei; Simin, Grigory; Asif Khan, Muhammad
卷第45卷
印刷ISSN0021-4922
电子ISSN1347-4065
文件大小175.77KB
发表时间2006-6-8
DOI10.1143/JJAP.45.4985
页码4985-4987

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