Ion-Implanted GaN/AlGaN/GaN HEMTs with Extremely Low Gate Leakage Current
- 期刊名称MRS Proceedings
- 作者Nomoto, Kazuki; Tajima, Taku; Mishima, Tomoyoshi; Satoh, Masataka; Nakamura, Tohru
- 卷第955卷
- 电子ISSN1946-4274
- 文件大小198.36KB
- 发表时间2006-1
- DOI10.1557/PROC-0955-I15-22
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