Determination of the interface properties of Ni-silicided strained-Si/SiGe heterostructure Schottky diodes using capacitance–voltage technique

• 作者A.R. Saha; S. Chattopadhyay; R. Das; C. Bose; C.K. Maiti
• 卷第50卷
• 印刷ISSN0038-1101
• 文件大小317.73KB
• 发表时间2006
• DOI10.1016/j.sse.2006.06.001
• 页码1269-1275