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Impact of Annealing Temperature Ramps on the Electrical Activation of N<sup>+</sup> and P<sup>+</sup> Co-Implanted SiC Layers

Impact of Annealing Temperature Ramps on the Electrical Activation of N+ and P+ Co-Implanted SiC Layers

Blanqué, Servane; Pérez, R.; Mestres, Narcis; Contreras, Sylvie; Camassel, Jean; Godignon, Phillippe
  • 期刊名称Materials Science Forum
  • 作者Blanqué, Servane; Pérez, R.; Mestres, Narcis; Contreras, Sylvie; Camassel, Jean; Godignon, Phillippe
  • 电子ISSN1662-9752
  • 文件大小208.08KB
  • 发表时间2006
  • DOI10.4028/www.scientific.net/MSF.527-529.795
  • 页码795-798
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