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[IEEE 2006 International SiGe Technology and Device Meeting - Princeton, NJ, USA (15-17 May 2006)] 2006 International SiGe Technology and Device Meeting - Highly Tensile Strained Silicon Carbon Phosphorus Alloys Epitaxially Grown into Recessed Source Drain Areas of NMOS devices

[IEEE 2006 International SiGe Technology and Device Meeting - Princeton, NJ, USA (15-17 May 2006)] 2006 International SiGe Technology and Device Meeting - Highly Tensile Strained Silicon Carbon Phosphorus Alloys Epitaxially Grown into Recessed Source Drain Areas of NMOS devices

Bauer, M.; Machkauotsan, V.; Arena, C.

作者Bauer, M.; Machkauotsan, V.; Arena, C.
文件大小1763.23KB
发表时间2006
DOI10.1109/istdm.2006.1716002
页码1-2

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