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High-nitrogen-content InGaAsN films on GaAs grown by metalorganic vapor phase epitaxy with TBAs and DMHy

High-nitrogen-content InGaAsN films on GaAs grown by metalorganic vapor phase epitaxy with TBAs and DMHy

S. Sanorpim; F. Nakajima; W. Ono; R. Katayama; K. Onabe

作者S. Sanorpim; F. Nakajima; W. Ono; R. Katayama; K. Onabe
卷第203卷
期第7期
印刷ISSN1862-6319
文件大小339.34KB
发表时间2006
DOI10.1002/pssa.200565240
页码1612-1617

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