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Tunneling magnetoresistance and magnetization switching of CoFeSiB free layered magnetic tunnel junctions

Tunneling magnetoresistance and magnetization switching of CoFeSiB free layered magnetic tunnel junctions

J.Y. Hwang; S.S. Kim; M.Y. Kim; J.R. Rhee; B.S. Chun; Y.K. Kim; T.W. Kim; S.S. Lee; D.G. Hwang
  • 作者J.Y. Hwang; S.S. Kim; M.Y. Kim; J.R. Rhee; B.S. Chun; Y.K. Kim; T.W. Kim; S.S. Lee; D.G. Hwang
  • 卷第303卷
  • 期第2期
  • 印刷ISSN0304-8853
  • 文件大小256.46KB
  • 发表时间2006
  • DOI10.1016/j.jmmm.2006.01.063
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