Mesoscopic fluctuations in the conductance of silicon-based MOS structures with a doped surface layer

• 作者B. A. Aronzon; A. S. Vedeneev; A. M. Kozlov; A. A. Panferov; V. V. Ryl’kov
• 卷第52卷
• 期第10期
• 印刷ISSN1064-2269
• 电子ISSN1555-6557
• 文件大小184.06KB
• 发表时间2007-10
• DOI10.1134/s1064226907100129
• 页码1153-1157